N-Channel MOSFET - 33N10 - 33A / 100V, TO-220

  • RM4.50

  • Product Code: 33N10
  • Availability: In Stock

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.



  • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V
  • Low gate charge ( typical 38 nC)
  • Low Crss ( typical 62 pF)
  • Fast switching
  • Improved dv/dt capability



  • Type of Control Channel: N -Channel
  • Current Drain:
    • Max Drain (Id): 33A
  • Gate Threshold Voltage VGS(TH): 2.1 – 4 V (typ 3V)
  • Gate-Source Voltage: 25V ±
  • Drain to Source Voltage (Vdss): 100 V
  • Power Dissipation (Max): 127W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220


Package Include


How to use (Example)


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Tags: N-Channel MOSFET