Reverse conducting IGBT MOSFET - H25R1203 - 25A / 1200V, TO-247

Applications

• Inductive cooking
• Inverterized microwave ovens
• Resonant converters
• Soft switching applications

Features

• Powerful monolithic body diode with low forward voltage designed for soft commutation only
• TRENCHSTOPTM technology applications offers:
  • Very tight parameter distribution
  • High ruggedness, temperature stable behavior
  • Low VCEsat
  • Easy parallel switching capability due to the positive temperature coefficient in VCEsat
• Low EMI
• IGBT: Insulated Gate Bipolar Transistor (IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.)

Specifications

• Type of Control Channel: N -Channel
• Collector Current (limited by Tj_max):
  • Collector Drain: 50A @ (Tc = 25°C)
  • Collector Drain: 25A @ (Tc = 100°C)
• Gate Threshold Voltage V_GE^(TH): 5.1 – 6.4 V
• Drain to Source Voltage (Vdss): 600 V
• Power Dissipation (Max): 365W (Tc = 25°C)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247

Package Include

1 x MOSFET