N-Channel MOSFET - 12N60 - 12A / 600V, TO-220

  • RM4.00

  • Product Code: 12N60
  • Availability: In Stock

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.



  • 12A, 600V
  • RDS(on) = 0.8Ω
  • Ultra low gate charge ( typical 42 nC )
  • Low reverse transfer capacitance ( CRSS = typical 25 pF )
  • Fast switching



  • Type of Control Channel: N -Channel
  • Current Drain:
    • Continuous Drain (Max): 12A
  • Gate Threshold Voltage VGS(TH): 2.0 – 4.0 V
  • Gate-Source Voltage: 30V ±
  • Drain to Source Voltage (Vdss): 600 V
  • Power Dissipation (Max): 225W (Tc = 25°C)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220


Package Include


How to use (Example)


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Tags: N-Channel MOSFET