N-Channel MOSFET - 17N80C3 - 17A / 800V, TO-247

  • RM11.00

  • Product Code: 17N80C3
  • Availability: In Stock

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.



  • 17A, 800V
  • RDS(on) = 0.29Ω
  • Extremely High dv/dt Ccpability
  • Fast switching



  • Type of Control Channel: N -Channel
  • Current Drain:
    • Continuous Drain (Id): 17A @ (Tc = 25°C)
    • Continuous Drain (Id): 11A @ (Tc = 100°C)
  • Gate Threshold Voltage VGS(TH): 2.1 – 3.9 V
  • Gate-Source Voltage: 30V ±
  • Drain to Source Voltage (Vdss): 800 V
  • Power Dissipation (Max): 208W (Tc = 25°C)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247


Package Include


How to use (Example)


Write a review

Note: HTML is not translated!
    Bad           Good


Tags: N-Channel MOSFET