N-Channel MOSFET - 6N80 - 6A / 800V, TO-220

  • RM5.00

  • Product Code: 6N80
  • Availability: In Stock

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.



  • 6A, 800V
  • RDS(on) = 2.0Ω @VGS = 10 V
  • Fast switching



  • Type of Control Channel: N -Channel
  • Current Drain Max: 6A 
  • Gate Threshold Voltage VGS(TH): 3.0 – 5.0 V
  • Gate-Source Voltage: 30V ±
  • Drain to Source Voltage (Vdss): 800 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
  • Power Dissipation (Max): 138W (Tc = 25°C)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220


Package Include


How to use (Example)


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Tags: N-Channel MOSFET