N-Channel MOSFET - 13N80 - 13A / 800V, TO-3P

  • RM12.50

  • Product Code: 13N80
  • Availability: In Stock

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.

 

Features

  • 13A, 800V
  • RDS(on) = 0.9Ω
  • Fast switching

 

Specifications

  • Type of Control Channel: N -Channel
  • Current Drain:
    • Max Drain: 13A
    • Continuous Drain (Id): 12.6A @ (Tc = 25°C)
    • Continuous Drain (Id): 8.0A @ (Tc = 100°C)
  • Gate Threshold Voltage VGS(TH): 3.0 – 5.0 V
  • Gate-Source Voltage: 30V ±
  • Drain to Source Voltage (Vdss): 800 V
  • Power Dissipation (Max): 300W (Tc = 25°C)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P

 

Package Include

1 x MOSFET

How to use (Example)

 

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