EE-SX470 Photoelectric Sensor

Type 

Grooved Type (Standard) 

Luminous method 

Non-modulated 

Sensing method 

Through-beam type 

Sensing distance 

Slot width: 5 mm 

Operation mode 

Light-ON 

Standard sensing object 

Opaque, 2 x 0.8 mm min. 

Differential distance elements 

0.025 mm max. 

Light source （Peak wavelength） 

Infrared LED (940 nm) 

Indicator 

Light indicator (red) 

Power supply voltage 

5 to 24 VDC ±10% 
ripple (p-p) 10 % max. 

Current consumption 

12 mA (L terminal open) 

Control output 

Output type 

NPN open collector output 

Load power supply voltage 

5 to 24 VDC 

Load curren 

100 mA max. 

Residual voltage 

at 100 mA load current: 0.8 V max. 
at 40 mA load current: 0.4 V max. 

Protection circuits 

Output short-cut protection 

Response frequency elements 

1 kHz min. 
Average value: 3 kHz 

Illumination on the surface receiver 

Fluorescent light: 1000 lx max. 

Ambient temperature 

Operating: -25 to 55 ℃ (with no freezing or condensation) 
Storage: -30 to 80 ℃ (with no freezing or condensation) 

Ambient humidity 

Operating: 5 to 85 % (with no condensation) 
Storage: 5 to 95 % (with no condensation) 

Vibration resistance 

Destruction: 20 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods) 

Shock resistance 

Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions 

Degree of protection 

IP50 

Connection method 

Connector type (Direct soldering possible) 

Weight 

Package: Approx. 3.1 g 

Material 

Case: Polybutylene terephthalate (PBT) 
Emitter/Receiver Cover: Polycarbonate (PC)