N-Channel MOSFET - 17N80C3 - 17A / 800V, TO-247

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.

Features

• 17A, 800V
• RDS(on) = 0.29Ω
• Extremely High dv/dt Ccpability
• Fast switching

Specifications

• Type of Control Channel: N -Channel
• Current Drain:
  • Continuous Drain (Id): 17A @ (Tc = 25°C)
  • Continuous Drain (Id): 11A @ (Tc = 100°C)
• Gate Threshold Voltage V_GS^(TH): 2.1 – 3.9 V
• Gate-Source Voltage: 30V ±
• Drain to Source Voltage (Vdss): 800 V
• Power Dissipation (Max): 208W (Tc = 25°C)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247

Package Include

1 x MOSFET

How to use (Example)