PDP Trench IGBT MOSFET - G7R313U , TO-252AA

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSE TM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.

Features

• Advanced Trench IGBT Technology
• Optimized for Sustain and Energy Recovery circuits in PDP applications
• Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency High repetitive peak current capability
• Fast switching
• Lead Free package

Specifications

• Type of Control Channel: N -Channel
• Current Drain:
  • Continuous Drain (Id): 40A @ (Tc = 25°C)
  • Continuous Drain (Id): 20A @ (Tc = 100°C)
• Gate Threshold Voltage: 2.2 – 4.7 V
• Gate-Source Voltage: 30V ±
• Drain to Source Voltage (Vdss): 600 V
• Power Dissipation (Max): 78W (Tc = 25°C)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface
• Supplier Device Package: TO-252AA

Package Include

1 x IRG7R313U (International Rectifier)