N-Channel MOSFET - 60NF06 FP - 60A / 600V, TO-220F

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.

Features

• 60A, 60V, RDS(on) = 18mΩ @VGS = 10 V
• Ultra low gate charge ( typical 39nC )
• Fast switching capability
• Low reverse transfer Capacitance (C_RSS= typical 115pF )
• Avalanche energy Specified
• Fast switching

Specifications

• Type of Control Channel: N -Channel
• Current Drain:
  • Max Drain: 60A
  • Continuous Drain (Id): 60A @ (Tc = 25°C)
  • Continuous Drain (Id): 39A @ (Tc = 100°C)
• Gate Threshold Voltage V_GS^(TH): 4.0 V
• Gate-Source Voltage: 30V ±
• Drain to Source Voltage (Vdss): 60 V
• Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
• Power Dissipation (Max): 100W (Tc = 25°C)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F

Package Include

1 x MOSFET

How to use (Example)