• N-Channel MOSFET - RJH30E2 - 35A / 360V, TO-220FL

N-Channel MOSFET - RJH30E2 - 35A / 360V, TO-220FL

  • RM6.00

  • Product Code: RJH30E2
  • Availability: In Stock

 

These High-Speed Power Switching N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.

 

Features

  • Trench gate technology (G5H series)
  • Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
  • High speed switching  tf = 150 ns typ
  • Low leak current  ICES= 1 μA max

 

Specifications

  • Type of Control Channel: N -Channel
  • Collector to emitter voltage: 360 VCES
  • Gate to emitter voltage: ±30 VGES
  • Collector current: 35 A  Ic
  • Collector peak current: 200 A  ic(peak)
  • Collector dissipation: 25 W (PC)
  • Junction temperature: 150 °C ( Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FL

 

Package Include

1 x MOSFET

 

 

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