N-Channel MOSFET - RJP30E2 - 30A / 360V, TO-247

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.

Features

• Trench gate and thin wafer technology;
• High speed switching;
• Low collector to emitter saturation voltage;
• Low leak current;
• Built-in fast recovery diode;

Specifications

• Type of Control Channel: N -Channel
• Current collector:
  • Continuous collector (Max): 30A
• Collector to emitter voltage : 360V
• Gate-Source Voltage: 30V ±
• Drain to Source Voltage (Vdss): 360 V
• Power Dissipation (Max): 25W (Tc = 25°C)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247

Package Include

1 x MOSFET