N-Channel MOSFET - 33N10 - 33A / 100V, TO-220

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.

Features

• 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 62 pF)
• Fast switching
• Improved dv/dt capability

Specifications

• Type of Control Channel: N -Channel
• Current Drain:
  • Max Drain (Id): 33A
• Gate Threshold Voltage V_GS^(TH): 2.1 – 4 V (typ 3V)
• Gate-Source Voltage: 25V ±
• Drain to Source Voltage (Vdss): 100 V
• Power Dissipation (Max): 127W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220

Package Include

1 x MOSFET

How to use (Example)