N-Channel MOSFET - 70N10 - 57A / 100V, TO-220

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features

• 57A, 100V
• RDS(on) = 0.023Ω @VGS = 10 V
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 150 pF)
• Fast switching

Specifications

• Type of Control Channel: N -Channel
• Current Drain:
  • Continuous Current (Id): 57A @ (Tc = 25°C)
  • Continuous Current (Id): 40.3A @ (Tc = 100°C)
• Gate Threshold Voltage V_GS^(TH): 2.0 – 4.0 V
• Gate-Source Voltage: 20V ±
• Drain to Source Voltage (Vdss): 100 V
• Power Dissipation (Max): 160W (Tc = 25°C)
• Operating Temperature: -55°C ~ 170°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220

Package Include

1 x MOSFET

How to use (Example)