N-Channel MOSFET - 5N60C - 5A / 600V, TO-220

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.

Features

• 5A, 600V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching

Specifications

• Type of Control Channel: N -Channel
• Current
  • Max Drain: 5A
  • Continuous Drain (Id): 4.5A @ (Tc = 25°C)
  • Continuous Drain (Id): 2.6A @ (Tc = 100°C)
• Gate Threshold Voltage V_GS^(TH): 3.0 – 5.0 V
• Gate-Source Voltage: 30V ±
• Drain to Source Voltage (Vdss): 600 V
• Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
• Power Dissipation (Max): 100W (Tc = 25°C)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220

Package Include

1 x MOSFET

How to use (Example)