N-Channel MOSFET - 9N90 - 9A / 900V, TO-220F

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.

Features

• 9A, 900V
• RDS(on) = 1.2Ω
• Low Reverse Transfer Capacitance (CRSS = Typical 14 pF)
• Fast switching

Specifications

• Type of Control Channel: N -Channel
• Current Drain:
  • Continuous Drain (Id): 8A @ (Tc = 25°C)
• Gate Threshold Voltage V_GS^(TH): 3.0 – 5.0 V
• Gate-Source Voltage: 30V ±
• Drain to Source Voltage (Vdss): 900 V
• Power Dissipation (Max): 240W (Tc = 25°C)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F

Package Include

1 x MOSFET

How to use (Example)