N-Channel MOSFET - 20N60 - 20A / 600V, TO-247

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.

Features

• 20A, 600V
• RDS(on) = 0.29Ω
• Extremely High dv/dt Ccpability
• Fast switching

Specifications

• Type of Control Channel: N -Channel
• Current Drain:
  • Continuous Drain (Id): 20A
• Gate Threshold Voltage V_GS^(TH): 2.0 – 4.0 V
• Gate-Source Voltage: 30V ±
• Drain to Source Voltage (Vdss): 600 V
• Power Dissipation (Max): 370W (Tc = 25°C)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247

Package Include

1 x MOSFET

How to use (Example)