N-Channel MOSFET - 6N60C - 6A / 600V, TO-220F

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.

Features

• 6A, 600V, RDS(on) = 2.0Ω @VGS = 10 V
• Low gate charge ( typical  16 nC)
• Low Crss ( typical  7 pF)
• Fast switching

Specifications

• Type of Control Channel: N -Channel
• Current Drain:
  • Max Drain: 6A
  • Continuous Drain (Id): 3.6A @ (Tc = 25°C)
  • Continuous Drain (Id): 2.3A @ (Tc = 100°C)
• Gate Threshold Voltage V_GS^(TH): 3.0 – 5.0 V
• Gate-Source Voltage: 30V ±
• Drain to Source Voltage (Vdss): 600 V
• Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
• Power Dissipation (Max): 44W (Tc = 25°C)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F

Package Include

1 x MOSFET

How to use (Example)