N-Channel MOSFET - 60N60 - 60A / 600V, TO-3P

These N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.

Offer the optimum performance for induction Heating, UPS, SMPS and PFC application.

Applications

• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters

Features

• 60A, 600V
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode

Specifications

• Type of Control Channel: N -Channel
• Collector Current:
  • Continuous Current (Id): 80A @ (Tc = 25°C)
  • Continuous Current (Id): 60A @ (Tc = 100°C)
• Gate Threshold Voltage V_GS^(TH): 5.0 – 7.0 V
• Gate-Source Voltage: 20V ±
• Drain to Source Voltage (Vdss): 600 V
• Power Dissipation (Max): 375W (Tc = 25°C)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P

Package Include

1 x MOSFET