N-Channel MOSFET - RJP30H2 - 35A / 360V, TO-3P

These High-Speed Power Switching N-Channel enhancement mode power field-effect transistors are advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts based on half-bridge topology.

Features

• Trench gate technology (G6H-II series)
• Low collector to emitter saturation voltage  VCE(sat)= 1.4 V typ
• High speed switching: tr =100 ns typ., tf = 180 ns typ.
• Low leak current  ICES= 1 μA max

Specifications

• Type of Control Channel: N -Channel
• Collector to emitter voltage: 360 V_CES
• Gate to emitter voltage: ±30 V_GES
• Collector current: 35 A  Ic
• Collector peak current: 200 A  ic(peak)
• Collector dissipation: 60 W (P_C)
• Junction temperature: 150 °C ( Tj)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P

Package Include

• 1 x MOSFET